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Please use this identifier to cite or link to this item: http://repository.tma.uz/xmlui/handle/1/11055
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dc.contributor.authorZikrillaev, N-
dc.contributor.authorAyupov, K-
dc.contributor.authorShoabdurakhimova, M-
dc.contributor.authorIsmaylov, K-
dc.contributor.authorNorkulov, N-
dc.contributor.authorAbdullaeva, N-
dc.contributor.authorMirkomilova, M-
dc.contributor.authorShukurova, D-
dc.date.accessioned2024-05-21T05:48:24Z-
dc.date.available2024-05-21T05:48:24Z-
dc.date.issued2024-01-20-
dc.identifier.issn2181-9203-
dc.identifier.urihttp://repository.tma.uz/xmlui/handle/1/11055-
dc.description.abstractThe development of new materials and expanded functionalities of existing semiconductor materials and structures allow for the creation of new types of devices with parameters distinct from the existing ones. In this regard, auto-oscillations of current detected in semiconductors are highly relevant in both scientific and practical aspects.en_US
dc.publisherScience and Education in Karakalpakstan.en_US
dc.subjectauto-oscillation, silicon, mechanism, manganese, zinc, sulfur, selenium, electrical field.en_US
dc.titleTHE MECHANISM OF CURRENT AUTO-OSCILLATIONS IN COMPENSATED SILICON DOPED WITH IMPURITY ATOMSen_US
dc.title.alternativeTHE MECHANISM OF CURRENT AUTO-OSCILLATIONS IN COMPENSATED SILICON DOPED WITH IMPURITY ATOMSen_US
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