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http://repository.tma.uz/xmlui/handle/1/11055| Title: | THE MECHANISM OF CURRENT AUTO-OSCILLATIONS IN COMPENSATED SILICON DOPED WITH IMPURITY ATOMS |
| Other Titles: | THE MECHANISM OF CURRENT AUTO-OSCILLATIONS IN COMPENSATED SILICON DOPED WITH IMPURITY ATOMS |
| Authors: | Zikrillaev, N Ayupov, K Shoabdurakhimova, M Ismaylov, K Norkulov, N Abdullaeva, N Mirkomilova, M Shukurova, D |
| Keywords: | auto-oscillation, silicon, mechanism, manganese, zinc, sulfur, selenium, electrical field. |
| Issue Date: | 20-Jan-2024 |
| Publisher: | Science and Education in Karakalpakstan. |
| Abstract: | The development of new materials and expanded functionalities of existing semiconductor materials and structures allow for the creation of new types of devices with parameters distinct from the existing ones. In this regard, auto-oscillations of current detected in semiconductors are highly relevant in both scientific and practical aspects. |
| URI: | http://repository.tma.uz/xmlui/handle/1/11055 |
| ISSN: | 2181-9203 |
| Appears in Collections: | Thesis, Articles |
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