THE MECHANISM OF CURRENT AUTO-OSCILLATIONS IN COMPENSATED  SILICON DOPED WITH IMPURITY ATOMS

Zikrillaev, N; Ayupov, K; Shoabdurakhimova, M; Ismaylov, K; Norkulov, N; Abdullaeva, N; Mirkomilova, M; Shukurova, D

dc.contributor.author	Zikrillaev, N
dc.contributor.author	Ayupov, K
dc.contributor.author	Shoabdurakhimova, M
dc.contributor.author	Ismaylov, K
dc.contributor.author	Norkulov, N
dc.contributor.author	Abdullaeva, N
dc.contributor.author	Mirkomilova, M
dc.contributor.author	Shukurova, D
dc.date.accessioned	2024-05-21T05:48:24Z
dc.date.available	2024-05-21T05:48:24Z
dc.date.issued	2024-01-20
dc.identifier.issn	2181-9203
dc.identifier.uri	http://repository.tma.uz/xmlui/handle/1/11055
dc.description.abstract	The development of new materials and expanded functionalities of existing semiconductor materials and structures allow for the creation of new types of devices with parameters distinct from the existing ones. In this regard, auto-oscillations of current detected in semiconductors are highly relevant in both scientific and practical aspects.	en_US
dc.publisher	Science and Education in Karakalpakstan.	en_US
dc.subject	auto-oscillation, silicon, mechanism, manganese, zinc, sulfur, selenium, electrical field.	en_US
dc.title	THE MECHANISM OF CURRENT AUTO-OSCILLATIONS IN COMPENSATED SILICON DOPED WITH IMPURITY ATOMS	en_US
dc.title.alternative	THE MECHANISM OF CURRENT AUTO-OSCILLATIONS IN COMPENSATED SILICON DOPED WITH IMPURITY ATOMS	en_US